Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year

SEOUL, Sept 29 (Reuters) – A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30% of Dynamic Random-Access Memory (DRAM) chipmakers'

(The article has been published through a syndicated feed. Except for the headline, the content has been published verbatim. Liability lies with original publisher.)